<^e.mi-(londilctoi l/^ioducti, one. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistors bd751/751a description ? collector-emitter sustaining voltage- : vceo(sus)=90v(min)-bd751 = 120v(min)-BD751A ? high power dissipation ? complement to type bd750/750a applications ? designed for high voltage and high power amplifier applications. absolute maximum ratings(ta=25'c) thermal characteristics symbol vcev vceo(sus) vebo ic ib pc tj tstg parameter collector-emitter voltage collector-emitter voltage bd751 BD751A bd751 BD751A emitter-base voltage collector current-continuous base current-continuous collector power dissipation@tc=25'c junction temperature storage temperature value 100 130 90 120 7 20 5 200 200 -65-200 unit v v v a a w "c c symbol rth j-c parameter thermal resistance.junction to case max 0.875 unit r/w 1 pin 1.base y^ 2. emitter ^ 3. collector (case) 1 to-3 package 2 4 "\ (-"-i i t i 1 r i : xri^xj / \? <& c vvj ^^ 1 llttll dim min max a 3900 b 25.30 26.67 c 780 8.30 d 0.90 1 .10 e (.40 1.60 g 10,92 h 546 k 1140 13.50 l 1675 1705 n 19.40 19.62 fl_ 4.00 4,20 u 30.00 3020 v 4,30 4.50 : ?es t i b i .ml scnii-c'imiluttnrs reserves the right to change lest coiulitions. parameter limits ami package dimensions uithout iiulicc. information himi.slteil liy n.i semi-( 'oitductors is helie\eil lo he null accurate anil reliable al the lime ol'i-.oii in press. |lo\\c\er, n.i seiiii-cuikliiclors assumes no respon>-ihilil\r an> t-rrors or oniisnions jiscosereil in its use. n i senn ?( imuliietms eiicimiiaw^ t-'ii-'lniiieia in \eril\ jata-lieel-. aiv ami-ill helmv plaeinu onlei-v
silicon npn power transistors bd751/751a electrical characteristics tc=25'c unless otherwise specified symbol vceo(sus) vce(sat) vse(sat) icev iebo hpe fr parameter collector-emitter sustaining voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current bd751 BD751A bd751 BD751A bd751 BD751A bd751 BD751A emitter cutoff current dc current gain bd751 BD751A current-gain ? bandwidth product conditions lc= 7.5a; ib= 0.75a lc= 5a; ib= 0.5a lc= 7.5a; ib= 0.75a lc= 5a; ib= 0.5a vcev=100v;vbe(off)=1.5v vcev=130v;vbe(off)=1.5v veb= 7v; ig=0 lc= 7.5a ; vce= 2v lc= 5a ; vce= 2v lc=0.5a;vce=10v;ftest=1mhz min 90 120 15 25 4 typ. max 1.5 1.0 1.8 1.8 0.5 0.5 1.0 60 100 unit v v v ma ma mhz
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